Growth of Polycrystal Silicon Thin Film by Hot Wire PECVD System for TFT Devices

ABSTRACT  Polycrystalline silicon thin films were grown  on silicon wafer substrate by using  hot wire plasma enhanced chemical vapor deposition (HW-PECVD) system.   10% of silane (SiH4) gas diluted in hydrogen were used as gas sources.  The effect of substrate temperature on their deposition rate,  layer structures and electrical properties were analyzed  trough the layer thickness,  crystal structure and dark conductivity. The deposition rate varies from 8.95 A/s to 14.57 A/s for substrates temperature from 175C to  275 C at gas flow rates  of 70 sccm and  filament temperatures of 1000 C.  Selengkapnya